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INT200PFI1 Datasheet(PDF) 3 Page - Power Integrations, Inc. |
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INT200PFI1 Datasheet(HTML) 3 Page - Power Integrations, Inc. |
3 / 12 page F 1/96 INT200 INT200 Functional Description 5 V Regulator The 5 V linear regulator circuit provides the supply voltage for the control logic and high-voltage level shift circuit. This allows the logic section to be directly compatible with 5 V CMOS logic without the need of an external 5 V supply. Undervoltage Lockout The undervoltage lockout circuit disables the LS OUT pin and both HSD pins whenever the V DD power supply falls below typically 9.0 V, and maintains this condition until the V DD power supply rises above typically 9.35 V. This guarantees that both MOSFETs will remain off during power-up or fault conditions. HSD1/HSD2 The HSD1 and HSD2 outputs are connected to integrated high-voltage N- channel MOSFET transistors which perform the level-shifting function for communication to the high-side driver. Controlled current capability allows the drain voltage to float with the high-side driver. Two individual channels produce a true differential communication channel for accurately controlling the high-side driver in the presence of fast moving high-voltage waveforms. Pulse Circuit The pulse circuit provides the two high- voltage level shifters with precise timing signals. Two pulses are sent over HSD1 to signal the high-side driver to turn on. One pulse is sent over HSD2 to signal the high-side driver to turn off. The combination of differential communication with the precise timing provides maximum immunity to noise. Conduction Latch An RS latch prevents the low-side driver and high-side driver from being on at the same time, regardless of the input signals. . Delay Circuit The delay circuit matches the low-side propagation delay with the combination of the pulse circuit, high voltage level shift, and high-side driver propagation delays. This ensures that the low-side driver and high-side driver will never be on at the same time during switching transitions in either direction. Driver The CMOS drive circuit provides drive power to the gate of the MOSFET used on the low side of the half bridge circuit. The driver consists of a CMOS buffer capable of driving an external transistor gate at up to 15 V. 3 Figure 4. Using the INT200 and INT201 in a 3-phase Configuration. PI-1461-042695 HV+ VDD LS IN HV- INT201 INT200 PHASE 1 PHASE 2 PHASE 3 3-PHASE BRUSHLESS DC MOTOR D1 C1 C2 R1 R2 Q2 Q1 HS IN 12 34 87 65 12 34 87 65 |
Similar Part No. - INT200PFI1 |
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Similar Description - INT200PFI1 |
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