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BQ29440DRBT Datasheet(PDF) 2 Page - Texas Instruments

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Part # BQ29440DRBT
Description  Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries (Second-Level Protection)
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ29440DRBT Datasheet(HTML) 2 Page - Texas Instruments

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bq29440, bq2944L0
bq29449, bq2944L9
SLUSA15B – MARCH 2010 – REVISED JUNE 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
TA
PART NUMBER
OUT PIN
PACKAGE
PACKAGE
PACKAGE
OVP
ORDERING INFORMATION(2)
LATCH
DESIGNATOR
MARKING
TAPE AND REEL
TAPE AND REEL
OPTION
(LARGE)(3)
(SMALL)(4)
-40°C
BQ29440
No
QFN-8
DRB
440
4.35 V
BQ29440DRBR
BQ29440DRBT
to
BQ2944L0
Yes
44L0
4.35 V
BQ2944L0DRBR
BQ2944L0DRBT
+85°C
BQ29449
No
449
4.30 V
BQ29449DRBR
BQ29449DRBT
BQ2944L9
Yes
44L9
4.30 V
BQ2944L9DRBR
BQ2944L9DRBT
(1)
Example: bq2944L0DRBR is a device with the OUT latch option with a VOV threshold of 4.35 V.
Contact Texas Instruments for other VOV threshold options.
(2)
For the most current package and ordering information, see the Package Addendum at the end of this document, or the TI website at
www.ti.com.
(3)
Large tape and reel quantity is 3,000 units.
(4)
Small tape and reel quantity is 250 units.
THERMAL INFORMATION
bq2944x
THERMAL METRIC(1)
DRB
UNITS
8 PINS
qJA
Junction-to-ambient thermal resistance(2)
50.5
qJC(top)
Junction-to-case(top) thermal resistance (3)
25.1
qJB
Junction-to-board thermal resistance (4)
19.3
°C/W
yJT
Junction-to-top characterization parameter (5)
0.7
yJB
Junction-to-board characterization parameter (6)
18.9
qJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
5.2
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter, yJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter, yJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining qJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
PIN FUNCTIONS
PIN NAME
PIN NO.
DESCRIPTION
CD
6
Connection to external capacitor for programmable delay time
GND
4
Ground pin
OUT
8
Output
VC1
1
Sense voltage input for top cell
VC2
2
Sense voltage input for second-to-top cell
VC3
3
Sense voltage input for third-to-top cell
VC4
5
Sense voltage input for fourth-to-top cell (bottom cell)
VDD
7
Power supply
2
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): bq29440 bq2944L0 bq29449 bq2944L9


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