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74HC245 Datasheet(PDF) 4 Page - ON Semiconductor |
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74HC245 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page 74HC245 http://onsemi.com 4 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VCC V –55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Input Voltage Vout = VCC – 0.1 V |Iout| v 20 mA 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V |Iout| v 20 mA 2.0 3.0 4.5 6.0 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 V VOH Minimum High−Level Output Voltage Vin = VIH |Iout| v 20 mA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V Vin = VIH |Iout| v 2.4 mA |Iout| v 6.0 mA |Iout| v 7.8 mA 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.2 3.7 5.2 VOL Maximum Low−Level Output Voltage Vin = VIL |Iout| v 20 mA 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V Vin = VIL |Iout| v 2.4 mA |Iout| v 6.0 mA |Iout| v 7.8 mA 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.4 0.4 0.4 Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 mA IOZ Maximum Three−State Leakage Current Output in High−Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ±0.5 ±5.0 ±10 mA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 mA 6.0 4.0 40 40 mA 6. Information on typical parametric values and high frequency or heavy load considerations can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns) Symbol Parameter VCC V Guaranteed Limit Unit –55 to 25_C v 85_C v 125_C tPLH, tPHL Maximum Propagation Delay, A to B, B to A (Figures 1 and 3) 2.0 3.0 4.5 6.0 75 55 15 13 95 70 19 16 110 80 22 19 ns tPLZ, tPHZ Maximum Propagation Delay, Direction or Output Enable to A or B (Figures 2 and 4) 2.0 3.0 4.5 6.0 110 90 22 19 140 110 28 24 165 130 33 28 ns tPZL, tPZH Maximum Propagation Delay, Output Enable to A or B (Figures 2 and 4) 2.0 3.0 4.5 6.0 110 90 22 19 140 110 28 24 165 130 33 28 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 3) 2.0 3.0 4.5 6.0 60 23 12 10 75 27 15 13 90 32 18 15 ns Cin Maximum Input Capacitance (Pin 1 or Pin 19) − 10 10 10 pF Cout Maximum Three−State I/O Capacitance (I/O in High−Impedance State) − 15 15 15 pF 7. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D). CPD Power Dissipation Capacitance (Per Transceiver Channel) (Note 8) Typical @ 25°C, VCC = 5.0 V pF 40 8. Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D). |
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