ADP3212A, NCP3218A

http://onsemi.com

8

ELECTRICAL CHARACTERISTICS

Parameter

Units

Max

Typ

Min

Conditions

Symbol

SYSTEM I/O BUFFERS

VID[6:0], DPRSLP, PSI INPUTS

Input Voltage

Refers to driving signal level

Logic low

Logic high

2.0

0.3

V

Input Current

V = 0.2 V, VID[6:0], DPRSLP

(active pulldown to GND)

PSI (active pullup to VCC)

1.0

−2.0

mA

VID Delay Time (Note 2)

Any VID edge to FB change 10%

200

ns

VARFREQ

Input Voltage

Refers to driving signal level

Logic low

Logic high

4.0

0.7

V

Input Current

1.0

mA

EN INPUT

Input Voltage

Refers to driving signal level

Logic low

Logic high

1.7

0.5

V

Input Current

EN = L or EN = H (static)

0.8 V < EN < 1.6 V (during transition)

10

−70

nA

mA

PH1, PH0 INPUTS

Input Voltage

Refers to driving signal level

Logic low

Logic high

2.0

0.5

V

Input Current

1.0

mA

CLKEN OUTPUT

Output Low Voltage

60

200

mV

Output High, Leakage Current

0.1

mA

PWM3, OD3 OUTPUTS

Output Voltage

4.0

10

5.0

500

mV

V

THERMAL MONITORING and PROTECTION

TTSNS Voltage Range (Note 2)

0

5.0

V

TTSNS Threshold

VCC = 5.0 V, TTSNS is falling

2.45

2.5

2.55

V

TTSNS Hysteresis

50

95

mV

TTSNS Bias Current

TTSNS = 2.6 V

−2.0

2.0

mA

VRTT Output Voltage

4.5

10

5.0

500

mV

V

SUPPLY

Supply Voltage Range

4.5

5.5

V

Supply Current

EN = high

EN = 0 V

7

10

10

50

mA

mA

VCC OK Threshold

VCC is rising

4.4

4.5

V

VCC UVLO Threshold

VCC is falling

4.0

4.15

V

VCC Hysteresis (Note 2)

250

mV

HIGH−SIDE MOSFET DRIVER

Pullup Resistance, Sourcing

Current (Note 3)

BST = PVCC

1.25

3.3

W

1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).

2. Guaranteed by design or bench characterization, not production tested.

3. Based on bench characterization data.

4. Timing is referenced to the 90% and 10% points, unless otherwise noted.