CAT93C66XI-T2 datasheet(3/17 Pages) ONSEMI

Part #	CAT93C66XI-T2

Description	4-Kb Microwire Serial CMOS EEPROM

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Manufacturer	ONSEMI [ON Semiconductor]

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CAT93C66

3

Doc. No. MD-1089 Rev. T

Characteristics subject to change without notice

D.C. OPERATING CHARACTERISTICS (MATURE PRODUCT, DIE REV. E – NOT RECOMMENDED FOR

NEW DESIGNS)

VCC = +1.8V to +5.5V, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Max

Units

ICC1

Power Supply Current (Write)

fSK = 1MHz, VCC = 5.0V

3

mA

ICC2

Power Supply Current (Read)

fSK = 1MHz, VCC = 5.0V

500

µA

ISB1

Power Supply Current

(Standby) (x8 Mode)

VIN = GND or VCC, CS = GND

ORG = GND

10

µA

ISB2

Power Supply Current

(Standby) (x16 Mode)

VIN = GND or VCC, CS = GND

ORG = Float or VCC

10

µA

ILI

Input Leakage Current

VIN = GND to VCC

1

µA

ILO

Output Leakage Current

VOUT = GND to VCC, CS = GND

1

µA

VIL1

Input Low Voltage

4.5V ≤ VCC < 5.5V

-0.1

0.8

V

VIH1

Input High Voltage

4.5V ≤ VCC < 5.5V

2

VCC + 1

V

VIL2

Input Low Voltage

1.8V ≤ VCC < 4.5V

0

VCC x 0.2

V

VIH2

Input High Voltage

1.8V ≤ VCC < 4.5V

VCC x 0.7

VCC + 1

V

VOL1

Output Low Voltage

4.5V ≤ VCC < 5.5V, IOL = 2.1mA

0.4

V

VOH1

Output High Voltage

4.5V ≤ VCC < 5.5V, IOH = -400µA

2.4

V

VOL2

Output Low Voltage

1.8V ≤ VCC < 4.5V, IOL = 1mA

0.2

V

VOH2

Output High Voltage

1.8V ≤ VCC < 4.5V, IOH = -100µA

VCC - 0.2

V

PIN CAPACITANCE

TA = 25°C, f = 1MHz, VCC = 5V

Symbol

Test

Conditions

Min

Typ

Max

Units

COUT

(1)

Output Capacitance (DO)

VOUT = 0V

5

pF

CIN

(1)

Input Capacitance (CS, SK, DI, ORG)

VIN = 0V

5

pF

Note:

(1) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100

and JEDEC test methods.

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CAT93C66XI-T2 Datasheet(PDF) 3 Page - ON Semiconductor

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