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CAT93C76ZD4E-GT3 Datasheet(PDF) 2 Page - ON Semiconductor

Part # CAT93C76ZD4E-GT3
Description  8-Kb Microwire Serial EEPROM
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C76ZD4E-GT3 Datasheet(HTML) 2 Page - ON Semiconductor

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CAT93C76
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
−55 to +125
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−2.0 to +VCC +2.0
V
VCC with Respect to Ground
−2.0 to +7.0
V
Lead Soldering Temperature (10 seconds)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Reference Test Method
Min
Units
NEND (Note 3)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles / Byte
TDR (Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2,000
V
ILTH (Notes 3, 4)
Latch−Up
JEDEC Standard 17
100
mA
3. These parameters are tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on I/O pins from −1 V to VCC + 1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = +1.8 V to +5.5 V unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current (Write)
fSK = 1 MHz, VCC = 5.0 V
1
3
mA
ICC2
Power Supply Current (Read)
fSK = 1 MHz, VCC = 5.0 V
300
500
mA
ISB1
Power Supply Current
(Standby) (x8 Mode)
CS = 0 V, ORG = GND
2
10
mA
ISB2
Power Supply Current
(Standby) (x16 Mode)
CS = 0 V, ORG = Float or VCC
0 (Note 5)
10
mA
ILI
Input Leakage Current
VIN = 0 V to VCC
0 (Note 5)
10
mA
ILO
Output Leakage Current
VOUT = 0 V to VCC, CS = 0 V
0 (Note 5)
10
mA
ILORG
ORG Pin Leakage Current
ORG = GND or ORG = VCC
1
10
mA
VIL1
Input Low Voltage
4.5 V v VCC v 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V v VCC v 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8 V v VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8 V v VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V v VCC v 5.5 V, IOL = 2.1 mA
0.4
V
VOH1
Output High Voltage
4.5 V v VCC v 5.5 V, IOH = −400 mA
2.4
V
VOL2
Output Low Voltage
1.8 V v VCC < 4.5 V, IOL = 100 mA
0.1
V
VOH2
Output High Voltage
1.8 V v VCC < 4.5 V, IOH = −100 mA
VCC − 0.2
V
5. 0 mA is defined as less than 900 nA.
Table 4. PIN CAPACITANCE (Note 3)
Symbol
Test
Conditions
Min
Typ
Max
Units
COUT
Output Capacitance (DO)
VOUT = 0 V
5
pF
CIN
Input Capacitance (CS, SK, DI, ORG)
VIN = 0 V
5
pF


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