CAT660

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3

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameters

Ratings

Units

V+ to GND

6

V

Input Voltage (Pins 1, 6 and 7)

−0.3 to (V+ + 0.3)

V

BOOST/FC and OSC Input Voltage

The least negative of (Out − 0.3 V) or

(V+ − 6 V) to (V+ + 0.3 V)

V

Output Short−circuit Duration to GND

(OUT may be shorted to GND for 1 sec without damage but shorting OUT

to V+ should be avoided.)

1

sec.

Plastic DIP

SOIC

TDFN

730

500

1

mW

mW

W

Storage Temperature

−65 to +160

°C

Lead Soldering Temperature (10 sec)

300

°C

Operating Ambient Temperature Range

−40 to +85

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

circuit as shown in Figure 3 unless otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Supply Voltage

VS

3.0

5.5

V

1.5

5.5

2.5

5.5

Supply Current

IS

BOOST/FC = open, LV = Open

0.09

0.5

mA

BOOST/FC = V+, LV = Open

0.3

3

Output Current

IOUT

OUT is more negative than −4 V

100

mA

Output Resistance

RO

BOOST/FC = V+ (C1, C2 ESR ≤ 0.5 W)

4

7

W

12

Oscillator Frequency

(Note 3)

FOSC

BOOST/FC = Open

5

10

kHz

BOOST/FC = V+

40

80

OSC Input

Current

IOSC

BOOST/FC = Open

BOOST/FC = V+

±1

±5

mA

Power Efficiency

PE

96

98

%

92

96

88

Voltage Conversion

Efficiency

VEFF

99

99.9

%

1. In Figure 3, test circuit capacitors C1 and C2 are 150 mF and have 0.2 W maximum ESR. Higher ESR levels may reduce efficiency and output

voltage.

2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency

keep external capacitor ESR under 0.2 W.