CM1213A-04S7 datasheet(4/14 Pages) ONSEMI

Part #	CM1213A-04S7

Description	1-, 2- and 4-Channel Low Capacitance ESD Protection Arrays

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CM1213A

Rev. 5 | Page 4 of 14 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

(SEE NOTE 1)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

V

P

Operating Supply Voltage (V

P-VN)

3.3

5.5

V

I

P

Operating Supply Current

(V

P-VN)=3.3V

8.0

µA

V

F

Diode Forward Voltage

Top Diode

Bottom Diode

I

F = 8mA; TA=25°C

0.60

0.80

0.95

V

I

LEAK

Channel Leakage Current

T

A=25°C; VP=5V, VN=0V

0.1

1.0

µA

C

IN

Channel Input Capacitance

At 1 MHz, V

P=3.3V, VN=0V,

V

IN=1.65V; Note 2

0.85

1.2

pF

∆C

IN

Channel Input Capacitance Matching

At 1 MHz, V

P=3.3V, VN=0V,

V

IN=1.65V; Note 2

0.02

pF

V

ESD

ESD Protection - Peak Discharge Voltage at

any channel input, in system

Contact discharge per

IEC 61000-4-2 standard

T

A=25°C; Notes 2, 3, and 4

8

kV

V

CL

Channel Clamp Voltage

Positive Transients

Negative Transients

T

A=25°C, IPP = 1A,

t

P = 8/20µS;

Notes 2 and 4

+10

–1.7

V

R

DYN

Dynamic Resistance

Positive Transients

Negative Transients

I

PP = 1A, tP = 8/20µS

Any I/O pin to Ground;

Notes 2 and 4

0.9

0.5

Ω

Note 1: All parameters specified at T

A = –40°C to +85°C unless otherwise noted.

Note 2: Standard IEC 61000-4-2 with C

Discharge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.

Note 3: These measurements performed with no external capacitor on V

P (VP floating).

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