CM1423

Rev. 3 | Page 5 of 14 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

(NOTE 1)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

80

100

120

Ω

C

Capacitance

At 2.5V DC, 1MHz, 30mV

AC

9

12

15

pF

V

DIODE

Diode Standoff Voltage

I

6.0

V

I

LEAK

Diode Leakage Current (reverse bias)

V

100

300

nA

V

SIG

Signal Voltage

Positive Clamp

Negative Clamp

I

I

5.6

-1.5

6.8

-0.8

9.0

-0.4

V

V

V

ESD

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-883,

Method 3015

b) Contact Discharge per IEC 61000-4-2

Level 4

Note 2

±30

±15

kV

kV

R

DYN

Dynamic Resistance

Positive

Negative

1.6

0.4

Ω

Ω

f

C

Cut-off Frequency

Z

R = 100

Ω, C = 12pF;

145

MHz

Note 1: T

Note 2: ESD applied to input and output pins with respect to GND, one at a time.