MBR30L45CTG datasheet(2/6 Pages) ONSEMI

Part #	MBR30L45CTG

Description	SWITCHMODE??Power Rectifier 45 V, 30 A

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR30L45CTG, MBRF30L45CTG

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MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

45

V

Average Rectified Forward Current

(Rated VR) TC = 137°C

IF(AV)

15

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz)

IFRM

30

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

190

A

Operating Junction Temperature (Note 1)

TJ

−55 to +150

°C

Storage Temperature

Tstg

*55 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/ms

ESD Ratings: Machine Model = C

Human Body Model = 3B

> 400

> 8000

V

THERMAL CHARACTERISTICS

Maximum Thermal Resistance

(MBR30L45CTG)

Junction−to−Case

Junction−to−Ambient

(MBRF30L45CTG)

Junction−to−Case

RqJC

RqJA

RqJC

1.9

45

2.2

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 15 A, TC = 25°C)

(IF = 15 A, TC = 125°C)

(IF = 30 A, TC = 25°C)

(IF = 30 A, TC = 125°C)

vF

0.50

0.44

0.61

0.60

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 25°C)

(Rated DC Voltage, TC = 125°C)

iR

0.65

250

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

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