MBRB3030CTG datasheet(4/6 Pages) ONSEMI

Part #	MBRB3030CTG

Description	SWITCHMODE Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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MBRB3030CT

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TYPICAL CHARACTERISTICS

IF(AV), AVERAGE FORWARD CURRENT (A)

15

10

5

0

15

20

25

DC

10

05

20

TJ = 150°C

π (RESISTIVE LOAD)

SQUARE WAVE

TA, AMBIENT TEMPERATURE (°C)

10

0

150

100

050

SQUARE WAVE

π (RESISTIVE LOAD)

10

20

DC

RqJA = 50°C/W

TA, AMBIENT TEMPERATURE (°C)

5

0

50

100

DC

10

20

SQUARE WAVE

150

RqJA = 25°C/W

IPK

IAV

= 5.0 (CAPACITIVE

LOAD)

TC, CASE TEMPERATURE (°C)

30

20

10

0

140

130

120

135

125

150

10

20

DC

IPK

IAV

= 5.0 (CAPACITIVE

LOAD)

Figure 6. Current Derating, Infinite Heatsink

Figure 7. Current Derating

Figure 8. Current Derating, Free Air

Figure 9. Forward Power Dissipation

4

2

155

145

15

10

0

SQUARE WAVE

π (RESISTIVE LOAD)

RqJC = 1°C/W

π (RESISTIVE LOAD)

8

6

IPK

IAV

= 5.0 (CAPACITIVE

LOAD)

IPK

IAV

= 5.0 (CAPACITIVE

LOAD)

Figure 10. Thermal Response

t, TIME (ms)

1.0

0.1

0.01

100

0.1

10

1.0

1000

SINGLE PULSE

Ppk

tp

t1

TIME

DUTY CYCLE, D = tp/t1

PEAK POWER, Ppk, is peak of an

equivalent square power pulse.

DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)]

where

DTJL = the increase in junction temperature above the lead temperature

r(t) = normalized value of transient thermal resistance at time, t, for example,

r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.

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