MMSF3P02HDR2 datasheet(2/8 Pages) ONSEMI

Part #	MMSF3P02HDR2

Description	Power MOSFET 3 Amps, 20 Volts P?묬hannel SO??

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MMSF3P02HD

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

−

24

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

4.0

2.0

−

Vdc

mV/

°C

Static Drain−Source On−Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

−

0.06

0.08

0.075

0.095

W

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

3.0

7.2

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1010

1400

pF

Output Capacitance

Coss

−

740

920

Transfer Capacitance

Crss

−

260

490

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc, RG = 6.0 W)

td(on)

−

25

50

ns

Rise Time

tr

−

135

270

Turn−Off Delay Time

td(off)

−

54

108

Fall Time

tf

−

84

168

Turn−On Delay Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc, RG = 6.0 W)

td(on)

−

16

32

Rise Time

tr

−

40

80

Turn−Off Delay Time

td(off)

−

110

220

Fall Time

tf

−

97

194

Gate Charge

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

−

33

46

nC

Q1

−

3.0

−

Q2

−

11

−

Q3

−

10

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 4)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

1.35

0.96

1.75

−

Vdc

Reverse Recovery Time

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

76

−

ns

ta

−

32

−

tb

−

44

−

Reverse Recovery Stored Charge

QRR

−

0.133

−

mC

3. Negative sign for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

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