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MSB92WT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MSB92WT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MSB92WT1, MSB92AWT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −300 − Vdc Collector-Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −300 − Vdc Emitter-Base Breakdown Voltage (IE = −100 mAdc, IE = 0) V(BR)EBO −5.0 − Vdc Collector-Base Cutoff Current (VCB = −200 Vdc, IE = 0) ICBO − −0.25 mA Emitter−Base Cutoff Current (VEB = −3.0 Vdc, IB = 0) IEBO − −0.1 mA DC Current Gain (Note 2) MSB92WT1: (VCE = −10 Vdc, IC = −1.0 mAdc) MSB92AWT1: (VCE = −10 Vdc, IC = −1.0 mAdc) (VCE = −10 Vdc, IC = −10 mAdc) (VCE = −10 Vdc, IC = −30 mAdc) hFE1 hFE1 hFE2 hFE3 25 120 40 25 − 200 − − − Collector-Emitter Saturation Voltage (Note 2) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc SMALL SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) fT 50 − MHz Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. |
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