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MTD6N20E1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MTD6N20E1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page MTD6N20E http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 200 − − 689 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 200 Vdc, VGS = 0 Vdc) (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 10 100 mAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 2.0 − 3.0 7.1 4.0 − Vdc mV/ °C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc) RDS(on) − 0.46 0.700 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 6.0 Adc) (ID = 3.0 Adc, TJ = 125°C) VDS(on) − − 2.9 − 5.0 4.4 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc) gFS 1.5 − − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 342 480 pF Output Capacitance Coss − 92 130 Reverse Transfer Capacitance Crss − 27 55 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VDD = 100 Vdc, ID = 6.0 Adc, VGS = 10 Vdc, RG = 9.1 W) td(on) − 8.8 17.6 ns Rise Time tr − 29 58 Turn−Off Delay Time td(off) − 22 44 Fall Time tf − 20 40.8 Gate Charge (See Figure 8) (VDS = 160 Vdc, ID = 6.0 Adc, VGS = 10 Vdc) QT − 13.7 21 nC Q1 − 2.7 − Q2 − 7.1 − Q3 − 5.9 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 3) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.99 0.9 1.2 − Vdc Reverse Recovery Time (See Figure 14) (IS = 6.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 138 − ns ta − 93 − tb − 45 − Reverse Recovery Stored Charge QRR − 0.74 − mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS − 7.5 − nH 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
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