MTD6N20E1 datasheet(2/9 Pages) ONSEMI

Part #	MTD6N20E1

Description	Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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MTD6N20E

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

200

−

689

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 200 Vdc, VGS = 0 Vdc)

(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

10

100

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

−

3.0

7.1

4.0

−

Vdc

mV/

°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc)

RDS(on)

−

0.46

0.700

Ohm

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 6.0 Adc)

(ID = 3.0 Adc, TJ = 125°C)

VDS(on)

−

2.9

−

5.0

4.4

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)

gFS

1.5

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

342

480

pF

Output Capacitance

Coss

−

92

130

Reverse Transfer Capacitance

Crss

−

27

55

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(VDD = 100 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc,

RG = 9.1 W)

td(on)

−

8.8

17.6

ns

Rise Time

tr

−

29

58

Turn−Off Delay Time

td(off)

−

22

44

Fall Time

tf

−

20

40.8

Gate Charge

(See Figure 8)

(VDS = 160 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)

QT

−

13.7

21

nC

Q1

−

2.7

−

Q2

−

7.1

−

Q3

−

5.9

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 3)

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.99

0.9

1.2

−

Vdc

Reverse Recovery Time

(See Figure 14)

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

138

−

ns

ta

−

93

−

tb

−

45

−

Reverse Recovery Stored Charge

QRR

−

0.74

−

mC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

−

7.5

−

nH

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

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