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N02L83W2AT25I Datasheet(PDF) 5 Page - ON Semiconductor |
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N02L83W2AT25I Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 10 page Rev. 8 | Page 5 of 10 | www.onsemi.com N02L83W2A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing Item Symbol 2.3 - 3.6 V 2.7 - 3.6 V Units Min. Max. Min. Max. Read Cycle Time tRC 70 55 ns Address Access Time tAA 70 55 ns Chip Enable to Valid Output tCO 70 55 ns Output Enable to Valid Output tOE 35 30 ns Chip Enable to Low-Z output tLZ 10 10 ns Output Enable to Low-Z Output tOLZ 55 ns Chip Disable to High-Z Output tHZ 0200 15 ns Output Disable to High-Z Output tOHZ 0200 15 ns Output Hold from Address Change tOH 10 10 ns Write Cycle Time tWC 70 55 ns Chip Enable to End of Write tCW 50 45 ns Address Valid to End of Write tAW 50 45 ns Write Pulse Width tWP 40 35 ns Address Setup Time tAS 00 ns Write Recovery Time tWR 00 ns Write to High-Z Output tWHZ 20 15 ns Data to Write Time Overlap tDW 40 35 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 55 ns |
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