N08L63W2A datasheet(5/10 Pages) ONSEMI

Part #	N08L63W2A

Description	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

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Manufacturer	ONSEMI [ON Semiconductor]

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Rev. 8 | Page 5 of 10 | www.onsemi.com

N08L63W2A

Timing Test Conditions

Item

Input Pulse Level

0.1VCC to 0.9 VCC

Input Rise and Fall Time

5ns

Input and Output Timing Reference Levels

0.5 VCC

Output Load

CL = 30pF

Operating Temperature

-40 to +85 oC

Timing

Item

Symbol

2.3 - 3.6 V

2.7 - 3.6 V

Units

Min.

Max.

Min.

Max.

Read Cycle Time

tRC

85

70

ns

Address Access Time (Random Access)

tAA

85

70

ns

Address Access Time (Page Mode)

tAAP

30

25

ns

Chip Enable to Valid Output

tCO

85

70

ns

Output Enable to Valid Output

tOE

30

25

ns

Byte Select to Valid Output

tLB, tUB

85

70

ns

Chip Enable to Low-Z output

tLZ

10

ns

Output Enable to Low-Z Output

tOLZ

55

ns

Byte Select to Low-Z Output

tLBZ, tUBZ

10

ns

Chip Disable to High-Z Output

tHZ

0200

20

ns

Output Disable to High-Z Output

tOHZ

0200

20

ns

Byte Select Disable to High-Z Output

tLBHZ, tUBHZ

0200

20

ns

Output Hold from Address Change

tOH

55

ns

Write Cycle Time

tWC

85

70

ns

Chip Enable to End of Write

tCW

50

ns

Address Valid to End of Write

tAW

50

ns

Byte Select to End of Write

tLBW, tUBW

50

ns

Write Pulse Width

tWP

40

ns

Address Setup Time

tAS

00

ns

Write Recovery Time

tWR

00

ns

Write to High-Z Output

tWHZ

20

ns

Data to Write Time Overlap

tDW

40

ns

Data Hold from Write Time

tDH

00

ns

End Write to Low-Z Output

tOW

55

ns

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N08L63W2A Datasheet(PDF) 5 Page - ON Semiconductor

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