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NB3N3002DTR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NB3N3002DTR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NB3N3002 http://onsemi.com 3 Table 3. ATTRIBUTES Characteristic Value ESD Protection Human Body Model > 2 kV Moisture Sensitivity, Indefinite Time Out of Dray Pack (Note 1) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 7623 Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. Table 4. MAXIMUM RATINGS (Note 2) Symbol Parameter Condition 1 Condition 2 Rating Units VDD Positive Power Supply GND = 0 V 4.6 V VI Input Voltage (VIN) GND = 0 V GND v VI v VDD −0.5 V to VDD+0.5 V V TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm TSSOP–16 TSSOP–16 138 108 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) (Note 3) TSSOP−16 33 to 36 °C/W Tsol Wave Solder 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. 3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). Table 5. DC CHARACTERISTICS (VDD = 3.3 V ±5%, GND = 0 V, TA = −40°C to +85°C) Symbol Characteristic Min Typ Max Unit IDD Power Supply Current (Note 4) 65 95 mA IDDOE Power Supply Current when OE is Set Low 35 65 mA VIH Input HIGH Voltage (X1/CLK, Sel0, Sel1,and OE) 0.7 * VDD VDD + 300 mV VIL Input LOW Voltage (X1/CLK, Sel0, Sel1, and OE) GND − 300 0.3* VDD mV VOH Output HIGH Voltage (See Figure 4) 660 700 850 mV VOL Output LOW Voltage (See Figure 4) −150 0 150 mV Vcross Crossing Voltage Magnitude (Absolute) 250 400 mV DVcross Change in Magnitude of Vcross 150 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. NB3N circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. 5. Measurement taken with outputs terminated with RS = 33.2 W, RL = 49.9 W, with load capacitance of 2 pF and current biasing resistor, RREF, from IREF (Pin 9) to GND of 475 W. See Figure 3. |
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