NCP629FC33T2G datasheet(3/11 Pages) ONSEMI

Part #	NCP629FC33T2G

Description	High Performance CMOS LDO Regulator with Enable and Enhanced ESD Protection in Chip Scale Package (CSP)

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ELECTRICAL CHARACTERISTICS

(Vin = Vout + 0.5 V, Cin = Cout =1.0 mF, for typical values TA = 25°C, for min/max values TA = -40°C to 125°C; unless otherwise noted.)

(Note 7)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Regulator Output

Output Voltage

1.5 V

1.8 V

2.8 V

3.0 V

3.3 V

3.5 V

5.0 V

Iout = 1.0 mA to 150 mA

Vin = (Vout + 0.5 V) to 6.0 V

Vout

1.470

1.764

2.744

2.940

3.234

3.430

4.900

(-2%)

1.530

1.836

2.856

3.060

3.366

3.570

5.100

(+2%)

V

Power Supply Ripple Rejection (Note 8)

(Vin = Vout + 1.0 V + 0.5 Vp-p)

Iout = 1.0 mA to 150 mA

f = 120 Hz

f = 1.0 kHz

f = 10 kHz

PSRR

-

62

55

38

-

dB

Line Regulation

Vin = (Vout + 0.5 V) to 6.0 V,

Iout = 1.0 mA

Regline

-

1.0

10

mV

Load Regulation

1.5 V

1.8 V

2.8 V to 5.0 V

Iout = 1.0 mA to 150 mA

Regload

-

2.0

20

25

30

mV

Output Noise Voltage (Note 8)

Vout = 1.5 V,

f = 10 Hz to 100 kHz

Vn

-

50

-

mVrms

Output Short Circuit Current

Vout = 0 V

Isc

300

550

800

mA

Dropout Voltage

1.5 V

1.8 V

2.8 V to 5.0 V

Measured at: Vout – 2.0%

Iout = 150 mA

VDO

-

150

125

75

225

175

125

mV

General

Disable Current

ENABLE = 0 V, Vin = 6 V

-40

°C ≤ TA ≤ 85°C

IDIS

-

0.01

1.0

mA

Ground Current

1.5 V

1.8 V to 3.0 V

3.3 V to 5.0 V

ENABLE = 0.9 V,

Iout = 1.0 mA to 150 mA

IGND

-

135

140

145

170

175

180

mA

Thermal Shutdown Temperature (Note 8)

TSD

-

175

-

°C

Thermal Shutdown Hysteresis (Note 8)

TSH

-

10

-

°C

Chip Enable

ENABLE Input Threshold Voltage

Vth(EN)

V

Voltage Increasing, Logic High

0.9

-

Voltage Decreasing, Logic Low

-

0.4

Enable Input Bias Current (Note 8)

IEN

-

3.0

100

nA

Timing

Output Turn On Time

1.5 V to 3.5 V

5.0 V

ENABLE = 0 V to Vin

ton

-

15

30

25

50

ms

7. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at

TJ = TA = 25 °C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

8. Values based on design and/or characterization.

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