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NCP3985SN30T1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP3985SN30T1G
Description  Micropower, 150 mA Low-Noise, High PSRR, Ultra-Low Dropout BiCMOS Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP3985SN30T1G Datasheet(HTML) 2 Page - ON Semiconductor

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NCP3985
http://onsemi.com
2
Figure 2. Simplified Block Diagram
Current
Limit
Bandgap
Reference
Voltage
CE
GND
Active
Discharge
Vout
Vin
Cnoise
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
Vin
Power Supply Input Voltage
2
GND
Power Supply Ground
3
CE
Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to
GND. If this function is not in use, connect to Vin. Internal 5 MW Pull Down resistor is connected
between CE and GND.
4
Cnoise
Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND)
5
Vout
Regulated Output Voltage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 1)
Vin
-0.3 V to 6 V
V
Chip Enable Voltage
VCE
-0.3 V to Vin +0.3 V
V
Noise Reduction Voltage
VCnoise
-0.3 V to Vin +0.3 V
V
Output Voltage
Vout
-0.3 V to Vin +0.3 V
V
Maximum Junction Temperature (Note 1)
TJ(max)
150
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL-STD-883, Method 3015
Machine Model Method 200 V
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Package Thermal Resistance: (Note 1)
Junction-to-Lead (pin 5)
Junction-to-Ambient
RθJA
109
220
°C/W
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area


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