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FS10ASH-06 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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FS10ASH-06 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Feb.1999 FS10ASH-06 OUTLINE DRAWING Dimensions in mm MP-3 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 60 ±10 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 0.26 VGS = 0V VDS = 0V L = 100 µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight V V A A A A A W °C °C g VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Symbol MAXIMUM RATINGS (Tc = 25 °C) Parameter Conditions Ratings Unit 6.5 2.3 0.9MAX. 2.3 1.0 0.5 ± 0.1 0.5 ± 0.2 0.8 5.0 ± 0.2 A q GATE w DRAIN e SOURCE r DRAIN wr q qwe r e ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 73m Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ............. 55ns |
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