DTC114TE

NPN Digital Transistor

Features

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making

device design easy

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base voltage

5

V

Collector Current-Continuous

100

mA

Collector Dissipation

150

mW

Junction Temperature

150

Storage Temperature Range

-55~150

Electrical Characteristics

Sym

Parameter

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

50

---

---

V

Collector-Emitter Breakdown Voltage

50

---

---

V

Emitter-Base Breakdown Voltage

5

---

---

V

Collector Cut-off Current

---

---

0.5

uA

Emitter Cut-off Current

DC Current Gain

100

300

600

---

Collector-Emitter Saturation Voltage

---

---

0.3

V

Input Resistor

7

10

13

K

Transition Frequency

---

250

---

MHz

omponents

20736 Marilla

Street Chatsworth



 !"#

$%    !"#

MCC

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.059

.067

1.50

1.70

B

.030

.033

0.75

0.85

C

.057

.069

1.45

1.75

D

.020 Nominal

0.50Nominal

E

.035

.043

0.90

1.10

G

.000

.004

.000

.100

H

.028

.031

.70

0.80

J

.004

.008

.100

.200

K

.010

.014

.25

.35

A

C

B

D

E

G

H

J

DIMENSIONS

K

3

1

2

1. Base

2. Emitter

3. Collector

TM

Micro Commercial Components

Revision:

3

200

9/02/11

---

---

0.5

uA

SOT-523

•

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

and MSL Rating 1

1 of

3

*Marking: 04