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NCP5222MNR2G Datasheet(PDF) 9 Page - ON Semiconductor |
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NCP5222MNR2G Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 28 page NCP5222 http://onsemi.com 9 ELECTRICAL CHARACTERISTICS (VCC = 5 V, VIN = 12 V, TA = −40°C to 85°C, unless other noted) Characteristics Unit Max Typ Min Test Conditions Symbol CONFIGURATION DETECTION Configuration Detection Time TCD 53 ms Pull−LOW Resistance in Detection RL_CD 2 kW Detection Threshold VCD VCCP pin to DRVS/2CH pin 0.5 V GATE DRIVER DH Pull−HIGH Resistance RH_DH1, RH_DH2 2.5 5 W DH Pull−LOW Resistance RL_DH1, RL_DH2 1.5 2.5 W DL Pull−HIGH Resistance RH_DL1, RH_DL2 2 3 W DL Pull−LOW Resistance RL_DL1, RL_DL2 0.75 1.5 W Dead Time TLH DL−off to DH−on (see Figure 4) 10 25 40 ns THL DH−off to DL−on (see Figure 4) 10 25 40 ns CONTROL LOGIC EN Logic Input Voltage Threshold for Disable VEN_Disable EN goes low 0.7 1.0 1.3 V Hysteresis 150 200 250 mV EN Logic Input Voltage Threshold for FPWM VEN_FPWM 1.7 1.95 2.25 V EN Logic Input Voltage Threshold for Skip VEN_SKIP EN goes high 2.4 2.65 2.9 V Hysteresis 100 175 250 mV EN Source Current IEN_SOURCE EN = 0 V (Note 3) 0.1 mA EN Sink Current IEN_SINK EN = 5 V (Note 3) 0.1 mA PGOOD Pin ON Resistance PGOOD_R I_PGOOD = 5 mA 70 W PGOOD Pin OFF Current PGOOD_LK 1 mA OUTPUT DISCHARGE MODE Output Discharge On−Resistance Rdischarge EN = 0 V, Vout = 0.5 V 25 35 W THERMAL SHUTDOWN Thermal Shutdown Tsd Shutdown Threshold (Note 3) 150 °C Hysteresis (Note 3) −25 °C 3. Guaranteed by design, not tested in production. T LH 1 V 1 V T HL DH−SWN DL−PGND Figure 4. Dead Time between High−Side Gate Drive and Low−Side Gate Drive |
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