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NCV8570MN280R2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV8570MN280R2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 12 page NCV8570 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (Vin = Vout + 0.5 V, VCE = 1.2 V, Cin = 0.1 mF, Cout = 1 mF, Cnoise = 10 nF, TA = −40°C to 85°C, unless otherwise specified (Note 2)) Characteristic Unit Max Typ Min Symbol Test Conditions TIMING Turn−on Time Iout = 150 mA Cnoise = 10 nF Cnoise = 100 nF ton − − 0.4 4 − − ms Turn−off Time Cnoise = 10 nF/100 nF Iout = 1 mA Iout = 10 mA toff − − 800 200 − − ms 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. Contact factory for other voltage options. 4. Guaranteed by design and characterization. 5. Characterized when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 1 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V. 6. Measured when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 0.5 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V. 7. Expected to disable device when CE pin is floating. |
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