NCV8570

http://onsemi.com

9

APPLICATION INFORMATION

General

The NCV8570 is a 200 mA (current limited) linear

regulator with a logic input for on/off control for the high

speed turn−off output voltage.

Access to the major contributor of noise within the

integrated circuit is provided as the focus for noise reduction

within the linear regulator system.

Power Up/Down

During power up, the NCV8570 maintains a high

until the output regulation voltage has been reached.

Active discharge circuitry has been implemented to insure

a fast turn off time. Then CE goes low, the active discharge

transistor turns on creating a fast discharge of the output

voltage. Power to drive this circuitry is drawn from the

output node. This is to maintain the lowest quiescent current

subsequently turns off when the output voltage discharges.

CE (chip enable)

The enable function is controller by the logic pin CE. The

voltage threshold of this pin is set between 0.4 V and 1.2 V.

A voltage lower than 0.4 V guarantees the device is off. A

voltage higher than 1.2 V guarantees the device is on. The

NCV8570 enters a sleep mode when in the off state drawing

less than 1

mA of quiescent current.

The device can be used as a simple regulator without use

Current Limit

Output Current is internally limited within the IC to a

minimum of 200 mA. The design is set to a higher value to

allow for variation in processing and the temperature

coefficient of the parameter. The NCV8570 will source this

amount of current measured with a voltage 100 mV lower

than the typical operating output voltage.

0 V) is specified at 320 mA (typ). There is no additional

circuitry to lower the current limit at low output voltages.

This number is provided for informational purposes only.

Output Capacitor

The NCV8570 has been designed to work with low ESR

ceramic capacitors. There is no ESR lower limit for stability

for the recommended 1

mF output capacitor. Stable region

for Output capacitor ESR vs Output Current is shown in

Figure 23.

Typical characteristics were measured with Murata

ceramic capacitors. GRM219R71E105K (1

mF, 25 V, X7R,

0805) and GRM21BR71A106K (10

mF, 10 V, X7R, 0805).

Output Noise

The main contributor for noise present on the output pin

which is generated at this node will be subsequently

amplified through the error amplifier and the PMOS pass

device. Access to the reference voltage node is supplied

a typical value of 20

A bypass capacitor is recommended for good noise

performance and better load transient response.

Thermal Shutdown

When the die temperature exceeds the Thermal Shutdown

threshold, a Thermal Shutdown (TSD) event is detected and

active discharge circuitry. The IC will remain in this state

until the die temperature moves below the shutdown

threshold (150

°C typical) minus the hysteresis factor (20°C

typical).

This feature provides protection from a catastrophic

device failure due to accidental overheating. It is not

intended to be used as a substitute for proper heat sinking.

The maximum device power dissipation can be calculated

by:

Thermal resistance value versus copper area and package is

shown in Figure 24.

700

600

500

400

300

200

100

0

80

130

180

230

280

330

380

TSOP−5 (1 oz)

TSOP−5 (2 oz)

DFN6 2x2.2 (1 oz)

DFN6 2x2.2 (2 oz)

(TSOP−5 for comparison only)