© Semiconductor Components Industries, LLC, 2010

July, 2010 − Rev. 0

1

Publication Order Number:

NDF11N50Z/D

NDF11N50Z, NDP11N50Z

N-Channel Power MOSFET

500 V, 0.52 W

Features

Rating

Symbol NDF11N50Z NDP11N50Z Unit

Drain−to−Source Voltage

500

V

Continuous Drain Current,

10.5 (Note

2)

10.5

A

Continuous Drain Current

6.7 (Note 2)

6.7

A

Pulsed Drain Current,

42 (Note 2)

42

A

(Note 1)

36

145

W

Gate−to−Source Voltage

±30

V

Single Pulse Avalanche

190

mJ

ESD (HBM)

(JESD22−A114)

4000

V

RMS Isolation Voltage

(t = 0.3 sec., R.H. ≤ 30%,

4500

V

Peak Diode Recovery

dv/dt

4.5 (Note 3)

V/ns

Continuous Source Cur-

rent (Body Diode)

10.5

A

Maximum Temperature for

Soldering Leads

260

°C

Operating Junction and

Storage Temperature Range

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq

[2 oz] including traces).

2. Limited by maximum junction temperature

N−Channel

MARKING

DIAGRAM

A

= Location Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

http://onsemi.com

500 V

0.52 Ω

NDF11N50ZG

or

NDP11N50ZG

AYWW

Gate

Source

Drain

TO−220FP

CASE 221D

STYLE 1

TO−220

CASE 221A

STYLE 5

G (1)

D (2)

S (3)

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION