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NDD04N50Z-1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NDD04N50Z-1G
Description  N-Channel Power MOSFET 500 V, 2.7 
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NDD04N50Z-1G Datasheet(HTML) 2 Page - ON Semiconductor

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NDP04N50Z, NDD04N50Z
http://onsemi.com
2
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
NDP04N50Z
NDD04N50Z
RqJC
1.6
2.0
°C/W
Junction−to−Ambient Steady State
(Note 2) NDP04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z−1
RqJA
51
40
80
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 1 mA
500
V
Breakdown Voltage Temperature
Coefficient
DBVDSS/
DTJ
Reference to 25°C,
ID = 1 mA
0.6
V/°C
Drain−to−Source Leakage Current
IDSS
VDS = 500 V, VGS = 0 V
25°C
1
mA
150°C
50
Gate−to−Source Forward Leakage
IGSS
VGS = ±20 V
±10
mA
ON CHARACTERISTICS (Note 4)
Static Drain−to−Source
On−Resistance
RDS(on)
VGS = 10 V, ID = 1.5 A
2.3
2.7
W
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 mA
3.0
4.5
V
Forward Transconductance
gFS
VDS = 15 V, ID = 1.5 A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
308
pF
Output Capacitance
Coss
43
Reverse Transfer Capacitance
Crss
9
Total Gate Charge
Qg
VDD = 250 V, ID = 3.4 A,
VGS = 10 V
12
nC
Gate−to−Source Charge
Qgs
2.6
Gate−to−Drain (“Miller”) Charge
Qgd
6.1
Plateau Voltage
VGP
6.6
V
Gate Resistance
Rg
5.4
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(on)
VDD = 250 V, ID = 3.4 A,
VGS = 10 V, RG = 5 W
9
ns
Rise Time
tr
9
Turn−Off Delay Time
td(off)
16
Fall Time
tf
10
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
IS = 3.4 A, VGS = 0 V
1.6
V
Reverse Recovery Time
trr
VGS = 0 V, VDD = 30 V
IS = 3.4 A, di/dt = 100 A/ms
240
ns
Reverse Recovery Charge
Qrr
0.9
mC
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.


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