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NSI45090DDT4G Datasheet(PDF) 5 Page - ON Semiconductor |
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NSI45090DDT4G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 6 page NSI45090DDT4G http://onsemi.com 5 Comparison of LED Circuit using CCR vs. Resistor Biasing ON Semiconductor CCR Design Resistor Biased Design Constant brightness over full Supply Voltage (more efficient), see Figure 10 Large variations in brightness over full Automotive Supply Voltage Little variation of power in LEDs, see Figure 11 Large variations of current (power) in LEDs Constant current extends LED strings lifetime, see Figure 10 High Supply Voltage/ Higher Current in LED strings limits lifetime Current decreases as voltage increases, see Figure 10 Current increases as voltage increases Current supplied to LED string decreases as temperature increases (self-limiting), see Figure 2 LED current decreases as temperature increases Single resistor is used for current select Requires costly inventory (need for several resistor values to match LED intensity) Fewer components, less board space required More components, more board space required Surface mount component Through-hole components Figure 10. Series Circuit Current Figure 11. LED Power Vin (V) Vin (V) 16 15 14 13 12 11 10 9 40 60 80 120 0 20 15 16 14 13 12 11 10 9 100 200 300 400 TA = 25°C Circuit Current with CCR Device Circuit Current with 83.3 W Representative Test Data for Figure 8 Circuit, Current of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 500 TA = 25°C LED Power with CCR Device LED Power with 83.3 W Representative Test Data for Figure 8 Circuit, Pd of LEDs, FR−4 @ 300 mm2, 2 oz Copper Area 0 600 700 100 800 140 Current Regulation: Pulse Mode (Ireg(P)) vs DC Steady-State (Ireg(SS)) There are two methods to measure current regulation: Pulse mode (Ireg(P)) testing is applicable for factory and incoming inspection of a CCR where test times are a minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is applicable for application verification where the CCR will be operational for seconds, minutes, or even hours. ON Semiconductor has correlated the difference in Ireg(P) to Ireg(SS) for stated board material, size, copper area and copper thickness. Ireg(P) will always be greater than Ireg(SS) due to the die temperature rising during Ireg(SS). This heating effect can be minimized during circuit design with the correct selection of board material, metal trace size and weight, for the operating current, voltage, board operating temperature (TA) and package. (Refer to Thermal Characteristics table). |
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