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ISL12022M Datasheet(PDF) 5 Page - Intersil Corporation |
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ISL12022M Datasheet(HTML) 5 Page - Intersil Corporation |
5 / 31 page 5 FN6668.7 June 4, 2010 Absolute Maximum Ratings Thermal Information Voltage on VDD, VBAT and IRQ/FOUT pins (Respect to Ground) . . . . . . . . . . . . . . . . -0.3V to 6.0V Voltage on SCL and SDA pins (Respect to Ground) . . . . . . . . . . . -0.3V to VDD +0.3V ESD Rating Human Body Model (Per MIL-STD-883 Method 3014) . . . . . . . . . . . >3kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . .>300V Charged Device Model . . . . . . . . . . . . . . . . . . .>2200V Latch-up . . . . . . . . . . . . . . . . . . . . . . . . Class II Level A, passed at +85°C ambient with the Level A latch-up criteria of 100mA or 1.5*VMAX input Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 20 Lead SOIC (Notes 4, 5) 70 35 Storage Temperature . . . . . . . . . . . . . . . -40°C to +85°C Pb-Free Reflow Profile (Note 6) . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 5. For θJC, the “case temp” location is on top of the package and measured in the center of the package between pins 6 and 15. 6. The ISL12022M Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible. Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles. DC Operating Characteristics RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated. Boldface limits apply over the operating temperature range, -40°C to +85°C. SYMBOL PARAMETER CONDITIONS MIN (Note 7) TYP (Note 8) MAX (Note 7) UNITS NOTES VDD Main Power Supply (Note 15) 2.7 5.5 V VBAT Battery Supply Voltage (Note 15) 1.8 5.5 V9 IDD1 Supply Current. (I2CNot Active, Temperature Conversion Not Active, FOUT Not Active) VDD = 5V 4.1 7 µA 10, 11 VDD = 3V 3.5 6 µA 10, 11 IDD2 Supply Current. (I2C Active, Temperature Conversion Not Active, Fout Not Active) VDD = 5V 200 500 µA 10, 11 IDD3 Supply Current. (I2CNot Active, Temperature Conversion Active, FOUT Not Active) VDD = 5V 120 400 µA 10, 11 IBAT Battery Supply Current VDD = 0V, VBAT = 3V, TA =+25°C 1.0 1.6 µA 10 VDD = 0V, VBAT = 3V 1.0 5.0 µA 10 IBATLKG Battery Input Leakage VDD = 5.5V, VBAT = 1.8V 100 nA ILI Input Leakage Current on SCL VIL = 0V, VIH = VDD -1.0 ±0.1 1.0 µA ILO I/O Leakage Current on SDA VIL = 0V, VIH = VDD -1.0 ±0.1 1.0 µA VBATM Battery Level Monitor Threshold -100 +100 mV VPBM Brownout Level Monitor Threshold -100 +100 mV VTRIP VBAT Mode Threshold (Note 15) 2.0 2.2 2.4 V VTRIPHYS VTRIP Hysteresis 30 mV 13 VBATHYS VBAT Hysteresis 50 mV 13 ΔFoutT Oscillator Stability vs Temperature VDD = 3.3V -5 +5 ppm 6 ΔFoutV Oscillator Stability vs Voltage 2.7V ≤ VDD ≤ 5.5V -3 +3 ppm ΔFoutI Oscillator Initial Accuracy VDD = 3.3V -3 +3 ppm 6 Temp Temperature Sensor Accuracy VDD = VBAT = 3.3V ±2 °C 13 ISL12022M |
Similar Part No. - ISL12022M_10 |
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Similar Description - ISL12022M_10 |
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