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NSR0240V2T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSR0240V2T1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page  NSR0240V2T1G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD 600 200 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 300 400 °C/W mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR 0.2 0.5 0.55 2.0 10 mA Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF 345 485 580 390 550 700 mV Total Capacitance (VR = 5.0 V, f = 1 MHz) CT 4.0 pF Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr 3.0 ns 1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 3. Pulse Generator transition time << trr. 4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 5. tp » trr RL = 50 W Current Transformer DUT 750 mH 0.1 mF 50 W Output Pulse Generator tr tp 10% 90% IF IRM trr iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) IF Pulse Generator Output Figure 1. Recovery Time Equivalent Test Circuit 50 W Input Oscilloscope 0.1 mF 0 V VR DC Current Source Adjust for IRM + − |
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