NTB5411NT4G datasheet(3/7 Pages) ONSEMI

Part #	NTB5411NT4G

Description	Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220

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NTB5411N, NTP5411N

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TYPICAL PERFORMANCE CURVES

0

20

40

60

80

100

120

140

0

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

VGS = 4.5 V

5.5 V

6 V

6.5 V

10 V

7 V

TJ = 25°C

0

20

40

60

80

100

120

140

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TJ = 25°C

TJ = −55°C

TJ = 125°C

VDS w 10 V

8

9

10

11

12

13

14

15

5

6789

10

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

ID = 40 A

TJ = 25°C

5

6

7

8

9

10

11

12

10

30

50

70

90

110

130 150

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

TJ = 25°C

VGS = 10 V

0.6

0.8

1

1.2

1.4

1.6

1.8

2

−50 −25

0

25

50

75

100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = 40 A

VGS = 10 V

10

100

1000

5

10

152025

303540

455055 60

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VGS = 0 V

TJ = 150°C

TJ = 125°C

2.2

2.4

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