NTD4804N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction--to--Case (Drain)

1.6

°C/W

Junction--to--TAB (Drain)

3.5

Junction--to--Ambient -- Steady State (Note 1)

60

Junction--to--Ambient -- Steady State (Note 2)

105

1. Surface--mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

2. Surface--mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage

30

V

Drain--to--Source Breakdown Voltage

Temperature Coefficient

26

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate--to--Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature

Coefficient

7.6

mV/°C

Drain--to--Source On Resistance

3.4

4.0

mΩ

3.4

4.7

5.5

4.6

Forward Transconductance

gFS

23

S

CHARGES AND CAPACITANCES

Input Capacitance

4490

pF

Output Capacitance

952

Reverse Transfer Capacitance

556

Total Gate Charge

30

40

nC

Threshold Gate Charge

5.5

Gate--to--Source Charge

13

Gate--to--Drain Charge

13

Total Gate Charge

73

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn--On Delay Time

18

ns

Rise Time

20

Turn--Off Delay Time

24

Fall Time

8

Turn--On Delay Time

10

ns

Rise Time

19

Turn--Off Delay Time

35

Fall Time

5

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.