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NTD4810N Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD4810N Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD4810N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction--to--Case (Drain) RθJC 3.0 °C/W Junction--to--TAB (Drain) RθJC--TAB 3.5 Junction--to--Ambient -- Steady State (Note 1) RθJA 75 Junction--to--Ambient -- Steady State (Note 2) RθJA 117 1. Surface--mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface--mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain--to--Source Breakdown Voltage V(BR)DSS VGS =0 V, ID = 250 mA 30 V Drain--to--Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 27 mV/°C Zero Gate Voltage Drain Current IDSS VGS =0 V, VDS =24 V TJ =25°C 1.0 mA TJ = 125°C 10 Gate--to--Source Leakage Current IGSS VDS =0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS =VDS,ID = 250 mA 1.5 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.2 mV/°C Drain--to--Source On Resistance RDS(on) VGS =10 to 11.5 V ID =30 A 8.0 10 mΩ ID =15 A 7.8 VGS =4.5 V ID =30 A 12 15.7 ID =15 A 11 Forward Transconductance gFS VDS =15 V, ID =10 A 9.0 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V,f= 1.0MHz, VDS =12 V 1165 1350 pF Output Capacitance Coss 284 330 Reverse Transfer Capacitance Crss 154 200 Total Gate Charge QG(TOT) VGS =4.5 V, VDS =15 V, ID =30 A 9.2 11 nC Threshold Gate Charge QG(TH) 1.3 Gate--to--Source Charge QGS 3.3 Gate--to--Drain Charge QGD 4.4 Total Gate Charge QG(TOT) VGS =11.5 V, VDS =15 V, ID =30 A 21 nC SWITCHING CHARACTERISTICS (Note 4) Turn--On Delay Time td(on) VGS =4.5 V, VDS =15 V, ID =15 A, RG =3.0 Ω 11.5 ns Rise Time tr 20.7 Turn--Off Delay Time td(off) 13.8 Fall Time tf 3.8 Turn--On Delay Time td(on) VGS =11.5 V, VDS =15 V, ID =15 A, RG =3.0 Ω 7.2 ns Rise Time tr 20.7 Turn--Off Delay Time td(off) 21.8 Fall Time tf 2.6 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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