NTD4813N datasheet(5/8 Pages) ONSEMI

Part #	NTD4813N

Description	Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK

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NTD4813N

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5

TYPICAL PERFORMANCE CURVES

Crss

010

15

25

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

400

0

800

5

TJ =25°C

Coss

Ciss

600

1000

Figure 8. Gate--To--Source and Drain--To--Source

Voltage vs. Total Charge

0

3

0

QG, TOTAL GATE CHARGE (nC)

15

6

5

ID =30 A

VDD =15 V

VGS =11.5 V

TJ =25°C

Q2

QT

7

0

0.5

VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (OHMS)

1

10

100

1

VGS =0 V

Figure 10. Diode Forward Voltage vs. Current

100

0.6

0.7

1.0

5

10

15

tr

td(off)

td(on)

tf

10

VDD =15 V

ID =30 A

VGS =11.5 V

0.8

0.9

20

30

25

TJ =25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

100

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

1000

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS =20 V

SINGLE PULSE

TC =25°C

1ms

100 ms

10 ms

dc

10 ms

20

9

1

100

0

25

TJ, JUNCTION TEMPERATURE (°C)

ID =12 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

50

75

175

20

60

80

100

125

150

200

40

300

700

500

900

100

12

3

24

1

Q1

10

50

70

30

8 9 10 11 12 13 14 15 16

1.5

13.5

4.5

7.5

10.5

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