NTGD4169F datasheet(1/7 Pages) ONSEMI

Part #	NTGD4169F

Description	Power MOSFET and Schottky Diode 30 V, 2.9 A, N?묬hannel with Schottky Barrier Diode, TSOP??

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2008 − Rev. 1

1

Publication Order Number:

NTGD4169F/D

NTGD4169F

Power MOSFET and

Schottky Diode

30 V, 2.9 A, N−Channel with Schottky

Barrier Diode, TSOP−6

Features

• Fast Switching

• Low Gate Change

• Low RDS(on)

• Low VF Schottky Diode

• Independently Connected Devices to Provide Design Flexibility

• This is a Pb−Free Device

Applications

• DC−DC Converters

• Portable Devices like PDA’s, Cellular Phones, and Hard Drives

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±12

V

N−Channel

Continuous Drain

Current (Note 1)

Steady State

TA = 25°C

TA = 85°C

ID

2.6

1.9

A

t ≤ 5 s

TA = 25°C

2.9

Power Dissipation

(Note 1)

Steady State

TA = 25°C

PD

0.9

W

t ≤ 5 s

1.1

Pulsed Drain Current

tp = 10 ms

IDM

8.6

A

Operating Junction and Storage Temperature

TJ, TSTG

−25 to

150

°C

Source Current (Body Diode)

IS

0.9

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

30

V

DC Blocking Voltage

VR

30

V

Average Rectified Forward Current

IF

1

A

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State (Note

1)

RqJA

140

°C/W

Junction−to−Ambient – t ≤ 5 s (Note 1)

RqJA

110

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

http://onsemi.com

N−Channel MOSFET

Schottky Diode

30 V

125 mW @ 2.5 V

90 mW @ 4.5 V

1.0 A

RDS(on) Max

0.53 V

ID Max

V(BR)DSS

N−CHANNEL MOSFET

SCHOTTKY DIODE

VR Max

IF Max

VF Max

2.6 A

2.2 A

K

A

TD = Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

TSOP−6

CASE 318G

STYLE 15

MARKING

DIAGRAM

TD MG

G

1

2

3

6

5

4

A

S

G

K

N/C

D

(Top View)

PIN CONNECTION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

G

S

D

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