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NTD6600NT4G Datasheet(PDF) 4 Page - ON Semiconductor |
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NTD6600NT4G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NTD6600N http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 0.1 1.0 10 100 1000 0.1 1.0 10 100 1000 0 2 4 6 8 0 2 4 6 8 10 12 14 16 18 0 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1 1000 100 1 10 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance RG, GATE RESISTANCE (W) Figure 10. Diode Forward Voltage versus Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) DRAIN−TO−SOURCE VOLTAGE (V) ID = 12 A TJ = 25°C Q2 Q1 VGS QT VDS = 80 V ID = 6 A VGS = 5 V tr td(off) td(on) tf VGS = 0 V TJ = 25°C VDS = 0 V VGS = 0 V Crss Coss Ciss 10 TJ = 25°C Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 100 ms 10 ms dc 10 ms 0 250 500 750 1000 1250 1500 10 5 0 5 1015 2025 Crss Ciss VGS VDS VDS 2 4 6 8 10 12 0 0.25 0.5 0.75 1.0 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE (°C) ID = 12 A 0 |
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