NTGS3441BT1G datasheet(3/6 Pages) ONSEMI

Part #	NTGS3441BT1G

Description	Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6

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NTGS3441B

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0

20

4

16

12

5

3

2

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

8

4

0

1

Figure 1. On-Region Characteristics

0.5

20

16

1.5

1

12

4

0

2

2.5

Figure 2. Transfer Characteristics

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

1.5

3

0.12

2.5

4

0.30

0.00

5

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

020

16

12

0.18

0.12

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

-ID, DRAIN CURRENT (AMPS)

-50

0

-25

25

1.4

1.2

1.0

0.8

0.7

50

125

100

Figure 5. On-Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

VGS = -4.5 V

-2.5 V

-2 V

-1.5 V

-3.5 V

2

3.5

TJ = 25°C

TJ = 125°C

TJ = -55°C

ID = -3 A

TJ = 25°C

VDS = -5 V

0.30

0.00

75

150

TJ = 25°C

VGS = -2.5 V

VGS = -4.5 V

ID = -3 A

VGS = -4.5 V

Figure 6. Capacitance Variation

1

0.06

8

4

1.5

1.3

1.1

0.9

48

2

010

600

400

200

0

20

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Coss

Ciss

Crss

4.5

0.06

0.18

0.24

1000

800

6

-3 V

-4 V

8

3

12

14

16

18

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