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NTGS3443B Datasheet(PDF) 2 Page - ON Semiconductor |
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NTGS3443B Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTGS3443B http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction-to-Ambient – Steady State (Note 3) RqJA 100 °C/W Junction-to-Ambient – t v 5 s (Note 3) RqJA 80 Junction-to-Ambient – Steady State (Note 4) RqJA 190 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA -20 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = -250 mA, Reference 25°C -15 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = -20 V TJ = 25°C -1.0 mA TJ = 70°C -5.0 Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V $0.1 mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA -0.6 -1.4 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.3 mV/ °C Drain-to-Source On Resistance RDS(on) VGS = -4.5 V, ID = -3.7 A 45 60 m W VGS = -2.7 V, ID = -3.1 A 65 90 VGS = -2.5 V, ID = -3.0 A 70 100 Forward Transconductance gFS VDS = -10 V, ID =-3.7 A 7.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = -10 V 819 pF Output Capacitance COSS 157 Reverse Transfer Capacitance CRSS 103 Total Gate Charge QG(TOT) VGS = -4.5 V, VDS = -10 V; ID = -3.7 A 8.0 11 nC Threshold Gate Charge QG(TH) 0.6 Gate-to-Source Charge QGS 1.7 Gate-to-Drain Charge QGD 2.4 Gate Resistance RG 11 W SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time td(ON) VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W 10 15 ns Rise Time tr 7.0 11 Turn-Off Delay Time td(OFF) 47 70 Fall Time tf 25 40 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -1.7 A TJ = 25°C -0.8 -1.2 V Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.7 A 15 30 ns 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures |
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