NTGS3443B datasheet(2/6 Pages) ONSEMI

Part #	NTGS3443B

Description	Power MOSFET -20 V, -4.2 A, Single P-Channel, TSOP-6

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NTGS3443B

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction-to-Ambient – Steady State (Note 3)

RqJA

100

°C/W

Junction-to-Ambient – t

v 5 s (Note 3)

RqJA

80

Junction-to-Ambient – Steady State (Note 4)

RqJA

190

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -250 mA

-20

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = -250 mA, Reference 25°C

-15

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = -20 V

TJ = 25°C

-1.0

mA

TJ = 70°C

-5.0

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±12 V

$0.1

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250 mA

-0.6

-1.4

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

3.3

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = -4.5 V, ID = -3.7 A

45

60

m

W

VGS = -2.7 V, ID = -3.1 A

65

90

VGS = -2.5 V, ID = -3.0 A

70

100

Forward Transconductance

gFS

VDS = -10 V, ID =-3.7 A

7.0

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = -10 V

819

pF

Output Capacitance

COSS

157

Reverse Transfer Capacitance

CRSS

103

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -10 V;

ID = -3.7 A

8.0

11

nC

Threshold Gate Charge

QG(TH)

0.6

Gate-to-Source Charge

QGS

1.7

Gate-to-Drain Charge

QGD

2.4

Gate Resistance

RG

11

W

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = -4.5 V, VDD = -10 V,

ID = -1.0 A, RG = 6.0 W

10

15

ns

Rise Time

tr

7.0

11

Turn-Off Delay Time

td(OFF)

47

70

Fall Time

tf

25

40

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = -1.7 A

TJ = 25°C

-0.8

-1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = -1.7 A

15

30

ns

5. Pulse Test: pulse width

v 300 ms, duty cycle v 2%

6. Switching characteristics are independent of operating junction temperatures

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