© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 4

1

Publication Order Number:

NTLJD4116N/D

NTLJD4116N

Power MOSFET

30 V, 4.6 A,

mCoolt Dual N−Channel,

2x2 mm WDFN Package

Features

Conduction

Level

Applications

Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

30

V

Gate−to−Source Voltage

±8.0

V

Continuous Drain

Current (Note 1)

Steady

State

3.7

A

2.7

t

≤ 5 s

4.6

Power Dissipation

(Note 1)

Steady

State

1.5

W

t

≤ 5 s

2.3

Continuous Drain

Current (Note 2)

Steady

State

2.5

A

1.8

Power Dissipation

(Note 2)

0.71

W

Pulsed Drain Current

20

A

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode) (Note 2)

2.0

A

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size

http://onsemi.com

30 V

90 m

W @ 2.5 V

70 m

W @ 4.5 V

4.6 A

125 m

W @ 1.8 V

250 m

W @ 1.5 V

G

S

N−CHANNEL MOSFET

D

JF

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

JFM

G

G

1

2

3

6

5

4

WDFN6

CASE 506AN

MARKING

DIAGRAM

1

2

3

6

5

4

S1

G1

D2

D1

G2

S2

(Top View)

1

PIN CONNECTIONS

D1

D2

Device

Package

ORDERING INFORMATION

NTLJD4116NT1G

WDFN6

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.