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NTLJD4116NT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTLJD4116NT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4 1 Publication Order Number: NTLJD4116N/D NTLJD4116N Power MOSFET 30 V, 4.6 A, mCoolt Dual N−Channel, 2x2 mm WDFN Package Features • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction • 2x2 mm Footprint Same as SC−88 • Lowest RDS(on) Solution in 2x2 mm Package • 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • This is a Pb−Free Device Applications • DC−DC Converters (Buck and Boost Circuits) • Low Side Load Switch • Optimized for Battery and Load Management Applications in Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc. • Level Shift for High Side Load Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID 3.7 A TA = 85°C 2.7 t ≤ 5 s TA = 25°C 4.6 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.5 W t ≤ 5 s 2.3 Continuous Drain Current (Note 2) Steady State TA = 25°C ID 2.5 A TA = 85°C 1.8 Power Dissipation (Note 2) TA = 25°C PD 0.71 W Pulsed Drain Current tp = 10 ms IDM 20 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 2.0 A Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. http://onsemi.com 30 V 90 m W @ 2.5 V 70 m W @ 4.5 V RDS(on) MAX 4.6 A ID MAX (Note 1) V(BR)DSS 125 m W @ 1.8 V 250 m W @ 1.5 V G S N−CHANNEL MOSFET D JF = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) JFM G G 1 2 3 6 5 4 WDFN6 CASE 506AN MARKING DIAGRAM 1 2 3 6 5 4 S1 G1 D2 D1 G2 S2 (Top View) 1 PIN CONNECTIONS D1 D2 Device Package Shipping† ORDERING INFORMATION NTLJD4116NT1G WDFN6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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