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NTLJS3180PZTAG Datasheet(PDF) 1 Page - ON Semiconductor |
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NTLJS3180PZTAG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: NTLJS3180PZ/D NTLJS3180PZ Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction • Lowest RDS(on) Solution in 2x2 mm Package • Footprint Same as SC−88 Package • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments • ESD Protected • This is a Pb−Free Device Applications • Optimized for Battery and Load Management Applications in Portable Equipment • High Side Load Switch • Battery Switch • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID −5.9 A TA = 85°C −4.2 t ≤ 5 s TA = 25°C −7.7 Power Dissipation (Note 1) Steady State TA = 25°C PD 1.9 W t ≤ 5 s 3.3 Continuous Drain Current (Note 2) Steady State TA = 25°C ID −3.5 A TA = 85°C −2.5 Power Dissipation (Note 2) TA = 25°C PD 0.7 W Pulsed Drain Current tp = 10 ms IDM −23 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −2.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size, (30 mm2, 2 oz Cu). http://onsemi.com −20 V 50 mW @ −2.5 V 38 mW @ −4.5 V RDS(on) MAX −7.7 A ID MAX V(BR)DSS 75 mW @ −1.8 V 200 mW @ −1.5 V G S P−CHANNEL MOSFET D AA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) AAMG G 1 2 3 6 5 4 WDFN6 CASE 506AP MARKING DIAGRAM Device Package Shipping† ORDERING INFORMATION NTLJS3180PZTAG WDFN6 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 2 3 6 5 4 D D G D D S (Top View) PIN CONNECTIONS S D Pin 1 NTLJS3180PZTBG |
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