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NTLJS3180PZTAG Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTLJS3180PZTAG
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTLJS3180PZTAG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 0
1
Publication Order Number:
NTLJS3180PZ/D
NTLJS3180PZ
Power MOSFET
−20 V, −7.7 A, mCoolt Single P−Channel,
ESD, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
Lowest RDS(on) Solution in 2x2 mm Package
Footprint Same as SC−88 Package
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
ESD Protected
This is a Pb−Free Device
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
High Side Load Switch
Battery Switch
DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±8.0
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
−5.9
A
TA = 85°C
−4.2
t ≤ 5 s
TA = 25°C
−7.7
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.9
W
t ≤ 5 s
3.3
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
−3.5
A
TA = 85°C
−2.5
Power Dissipation
(Note 2)
TA = 25°C
PD
0.7
W
Pulsed Drain Current
tp = 10 ms
IDM
−23
A
Operating Junction and Storage Temperature
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
−2.8
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm2, 2 oz Cu).
http://onsemi.com
−20 V
50 mW @ −2.5 V
38 mW @ −4.5 V
RDS(on) MAX
−7.7 A
ID MAX
V(BR)DSS
75 mW @ −1.8 V
200 mW @ −1.5 V
G
S
P−CHANNEL MOSFET
D
AA = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AAMG
G
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
NTLJS3180PZTAG
WDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
S
D
Pin 1
NTLJS3180PZTBG


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