NTMFS4119N datasheet(2/5 Pages) ONSEMI

Part #	NTMFS4119N

Description	Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4119N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain-to-Source Breakdown Voltage

T

emperature Coefficient

V(BR)DSS/TJ

19

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 24 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

2.5

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

7.0

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V, ID = 29 A

2.3

3.5

m

W

VGS = 4.5 V, ID = 25 A

3.1

4.8

Forward Transconductance

gFS

VDS = 15 V, ID = 10 A

23

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

4800

pF

Output Capacitance

COSS

800

Reverse Transfer Capacitance

CRSS

530

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V, ID = 18 A

36.8

60

nC

Threshold Gate Charge

QG(TH)

7.3

Gate-to-Source Charge

QGS

11

Gate-to-Drain Charge

QGD

17.4

Gate Resistance

RG

0.73

W

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V,

ID = 1.0 A, RG = 3.0 W

28

ns

Rise Time

tr

26

Turn-Off Delay Time

td(OFF)

35

Fall Time

tf

40

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 8.0 A

TJ = 25°C

0.74

1.0

V

TJ = 125°C

0.56

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 8.0 A

36.5

ns

Charge Time

ta

19.3

Discharge Time

tb

19.8

Reverse Recovery Charge

QRR

37

nC

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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