NTMFS4121NT1G datasheet(2/6 Pages) ONSEMI

Part #	NTMFS4121NT1G

Description	Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4121N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

21

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 24 V

TJ = 25°C

1.0

mA

TJ = 125°C

10

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

2.5

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

7.4

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V, ID = 24 A

4.2

5.25

m

W

VGS = 4.5 V, ID = 21 A

5.5

7.0

Forward Transconductance

gFS

VDS = 15 V, ID = 24 A

20

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

2700

pF

Output Capacitance

COSS

480

Reverse Transfer Capacitance

CRSS

290

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V, ID = 21 A

24

40

nC

Threshold Gate Charge

QG(TH)

3.0

Gate-to-Source Charge

QGS

7.3

Gate-to-Drain Charge

QGD

10.2

Gate Resistance

RG

1.5

W

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V,

ID = 1.0 A, RL = 15 W, RG = 3.0 W

16

ns

Rise Time

tr

29

Turn-Off Delay Time

td(OFF)

32

Fall Time

tf

31

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 6.0 A

TJ = 25°C

0.8

1.0

V

TJ = 125°C

0.6

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 6.0 A

34

ns

Charge Time

ta

18

Discharge Time

tb

16

Reverse Recovery Charge

QRR

25.4

nC

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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