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NTMFS4823N Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFS4823N Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page NTMFS4823N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 6.65 ns Rise Time tr 15.3 Turn−Off Delay Time td(OFF) 17.6 Fall Time tf 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.95 1.2 V TJ = 125°C 0.8 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 7.9 ns Charge Time ta 5.8 Discharge Time tb 2.1 Reverse Recovery Charge QRR 0.6 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 1.3 nH Drain Inductance LD 0.005 Gate Inductance LG 1.84 Gate Resistance RG 1.0 3.0 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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