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NTMFS4835NT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMFS4835NT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTMFS4835N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.0 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 55.1 Junction−to−Ambient – Steady State (Note ) RqJA 140.1 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 22.4 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25 °C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 1.9 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.3 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V to 11.5 V ID = 30 A 2.9 3.5 mW ID = 15 A 2.5 VGS = 4.5 V ID = 30 A 4.3 5.0 ID = 15 A 3.9 Forward Transconductance gFS VDS = 15 V, ID = 15 A 21 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 12 V 3100 pF Output Capacitance COSS 670 Reverse Transfer Capacitance CRSS 360 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A 22 39 nC Threshold Gate Charge QG(TH) 4.7 Gate−to−Source Charge QGS 8.3 Gate−to−Drain Charge QGD 8.8 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A 52 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 16 ns Rise Time tr 31 Turn−Off Delay Time td(OFF) 22 Fall Time tf 13 Turn−On Delay Time td(ON) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 10 ns Rise Time tr 23 Turn−Off Delay Time td(OFF) 30 Fall Time tf 10 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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