NTMFS4839NT3G datasheet(3/6 Pages) ONSEMI

Part #	NTMFS4839NT3G

Description	Power MOSFET 30 V, 66 A, Single N?묬hannel, SO??FL

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NTMFS4839N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.9

1.2

V

TJ = 125°C

0.8

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

22.2

ns

Charge Time

ta

12.5

Discharge Time

tb

9.7

Reverse Recovery Charge

QRR

10.8

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

0.93

nH

Drain Inductance

LD

0.005

nH

Gate Inductance

LG

1.84

nH

Gate Resistance

RG

3.3

W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

0

10

20

30

40

50

60

70

80

90

0

123

4

567

8

VGS = 3.0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

3.5 V

4.0 V

4.2 V

4.4 V

4.6 V

6.0 V

TJ = 25°C

0

10

20

30

40

50

60

70

80

90

123

4

56

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TC = 25°C

TC = −55°C

TC = 125°C

0.004

0.006

0.008

0.01

0.012

2.5

3.5

4.5

5.5

6.5

7.5

8.5

9.5

10.5 11.5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 30 A

TJ = 25°C

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.01

10

15

20

25

30

35

40

VGS = 11.5 V

VGS = 4.5 V

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Current

and Temperature

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