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NTMFS4839NT3G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFS4839NT3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page NTMFS4839N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.9 1.2 V TJ = 125°C 0.8 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 22.2 ns Charge Time ta 12.5 Discharge Time tb 9.7 Reverse Recovery Charge QRR 10.8 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 0.93 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG 3.3 W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. 0 10 20 30 40 50 60 70 80 90 0 123 4 567 8 VGS = 3.0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics 3.5 V 4.0 V 4.2 V 4.4 V 4.6 V 6.0 V TJ = 25°C 0 10 20 30 40 50 60 70 80 90 123 4 56 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics TC = 25°C TC = −55°C TC = 125°C 0.004 0.006 0.008 0.01 0.012 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance versus Gate−to−Source Voltage ID = 30 A TJ = 25°C 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 10 15 20 25 30 35 40 VGS = 11.5 V VGS = 4.5 V ID, DRAIN CURRENT (A) Figure 4. On−Resistance versus Drain Current and Temperature |
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