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NTMFS4841NHT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMFS4841NHT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 4 1 Publication Order Number: NTMFS4841NH/D NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Sym- bol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C TA = 85°C ID 13.5 9.7 A Power Dissipation RqJA (Note 1) TA = 25°C TA = 85°C PD 2.16 1.1 W Continuous Drain Current RqJA v10 s TA = 25°C TA = 85°C ID 21.8 15.7 A Power Dissipation RqJA v10 s TA = 25°C TA = 85°C PD 5.7 2.9 W Continuous Drain Current RqJA (Note 2) TA = 25°C TA = 85°C ID 8.6 6.2 A Power Dissipation RqJA (Note 2) TA = 25°C TA = 85°C PD 0.87 0.45 W Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C ID 59 42.5 A Power Dissipation RqJC (Note 1) TC = 25°C TC = 85°C PD 41.7 21.7 W Pulsed Drain Current tp = 10 ms TA = 25°C IDM 177 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 35 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 25.6 A, L = 0.3 mH, RG = 25 W) EAS 98 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 4841NH AYWWG G 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 7.0 mW @ 10 V 59 A 11.6 mW @ 4.5 V G (4) S (1,2,3) N−CHANNEL MOSFET D (5,6) Device Package Shipping† ORDERING INFORMATION NTMFS4841NHT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4841NHT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Tech- niques Reference Manual, SOLDERRM/D. |
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