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NTMFS4898NFT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTMFS4898NFT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 2 1 Publication Order Number: NTMFS4898NF/D NTMFS4898NF Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Note 1) Steady State TA = 25°C ID 22.5 A TA = 85°C 16.2 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.72 W Continuous Drain Current RqJA v 10 sec TA = 25°C ID 36.7 A TA = 85°C 26.5 Power Dissipation RqJA, t v 10 sec TA = 25°C PD 7.23 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 13.2 A TA = 85°C 9.5 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.93 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 117 A TC = 85°C 84.4 Power Dissipation RqJC (Note 1) TC = 25°C PD 73.5 W Pulsed Drain Current tp=10ms TA = 25°C IDM 234 A Current limited by package TA = 25°C IDmaxpkg 100 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 92 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 39 Apk, L = 0.3 mH, RG = 25 W) EAS 228 mJ Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 4898NF AYWWG G 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 3.0 mW @ 10 V 117 A 4.8 mW @ 4.5 V N−CHANNEL MOSFET Device Package Shipping† ORDERING INFORMATION NTMFS4898NFT1G SO−8FL (Pb−Free) 1500 / Tape & Reel NTMFS4898NFT3G SO−8FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (Note: Microdot may be in either location) G S D |
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