NTMFS4899NF datasheet(2/6 Pages) ONSEMI

Part #	NTMFS4899NF

Description	Power MOSFET 30 V, 75 A, Single N?묬hannel, SO?? FL

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NTMFS4899NF

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

RqJC

2.6

°C/W

Junction−to−Ambient – Steady State (Note 1)

RqJA

46.3

Junction−to−Ambient – Steady State (Note 2)

RqJA

136.2

Junction−to−Ambient − t v 10 sec

RqJA

17.4

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size (50 mm2, 1 oz Cu).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1.0 mA

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

TJ

27

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25 °C

500

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 1.0 mA

1.5

2.5

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

10

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 30 A

3.9

5.0

mW

ID = 15 A

3.8

VGS = 4.5 V

ID = 30 A

6.0

7.5

ID = 15 A

5.8

Forward Transconductance

gFS

VDS = 1.5 V, ID = 15 A

57

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 12 V

1600

pF

Output Capacitance

COSS

360

Reverse Transfer Capacitance

CRSS

165

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

12.2

nC

Threshold Gate Charge

QG(TH)

1.6

Gate−to−Source Charge

QGS

4.6

Gate−to−Drain Charge

QGD

4.6

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V,

ID = 30 A

25

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

12.6

ns

Rise Time

tr

20.3

Turn−Off Delay Time

td(OFF)

20

Fall Time

tf

4.2

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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