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NTMFS4899NF Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMFS4899NF Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTMFS4899NF http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.6 °C/W Junction−to−Ambient – Steady State (Note 1) RqJA 46.3 Junction−to−Ambient – Steady State (Note 2) RqJA 136.2 Junction−to−Ambient − t v 10 sec RqJA 17.4 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size (50 mm2, 1 oz Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1.0 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 27 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25 °C 500 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1.0 mA 1.5 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 10 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 3.9 5.0 mW ID = 15 A 3.8 VGS = 4.5 V ID = 30 A 6.0 7.5 ID = 15 A 5.8 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 57 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 12 V 1600 pF Output Capacitance COSS 360 Reverse Transfer Capacitance CRSS 165 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A 12.2 nC Threshold Gate Charge QG(TH) 1.6 Gate−to−Source Charge QGS 4.6 Gate−to−Drain Charge QGD 4.6 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 25 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.6 ns Rise Time tr 20.3 Turn−Off Delay Time td(OFF) 20 Fall Time tf 4.2 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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