NTMS4705NR2G datasheet(2/5 Pages) ONSEMI

Part #	NTMS4705NR2G

Description	Power MOSFET 30 V, 12 A, Single N-Channel, SO-8

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMS4705N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

15

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS =

24 V

TJ = 25°C

1.0

mA

TJ = 125°C

50

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

2.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

5.0

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V, ID = 12 A

8.0

10

m

W

VGS = 4.5 V, ID = 10 A

10.5

14

Forward Transconductance

gFS

VDS = 15 V, ID = 10 A

19

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

1078

pF

Output Capacitance

Coss

460

Reverse Transfer Capacitance

Crss

127

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V, ID = 10 A

11

18

nC

Threshold Gate Charge

QG(TH)

1.1

Gate-to-Source Charge

QGS

2.1

Gate-to-Drain Charge

QGD

5.8

Gate Resistance

RG

1.76

3.5

W

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

td(on)

VGS = 10 V, VDD = 15 V, ID = 1.0 A,

RG = 3.0 W

7.8

ns

Rise Time

tr

4.7

Turn-Off Delay Time

td(off)

27

Fall Time

tf

17

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 3.0 A

TJ = 25°C

0.73

1.0

V

TJ = 125°C

0.51

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 3.0 A

38

ns

Charge Time

ta

17

Discharge Time

tb

21

Reverse Recovery Charge

QRR

30

nC

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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