NTMS4706NR2G datasheet(1/6 Pages) ONSEMI

Part #	NTMS4706NR2G

Description	Power MOSFET 30 V, 10.3 A, Single N?묬hannel, SO??

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2005 − Rev. 3

1

Publication Order Number:

NTMS4706N/D

NTMS4706N

Power MOSFET

30 V, 10.3 A, Single N−Channel, SO−8

Features

• Low RDS(on)

• Low Gate Charge

• Standard SO−8 Single Package

• Pb−Free Package is Available

Applications

• Notebooks, Graphics Cards

• Synchronous Rectification

• High Side Switch

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°C

ID

8.6

A

TA = 85°C

6.2

t

v 10 s

TA = 25°C

10.3

Power Dissipation

(Note 1)

Steady

State

TA = 25°C

PD

1.5

W

t

v 10 s

2.2

Continuous Drain

Current (Note 2)

Steady

State

TA = 25°C

ID

6.4

A

TA = 85°C

4.6

Power Dissipation

(Note 2)

TA = 25°C

PD

0.83

W

Pulsed Drain Current

tp = 10 ms

IDM

31

A

Operating Junction and Storage Temperature

TJ,

Tstg

−55 to

150

°C

Source Current (Body Diode)

IS

2.1

A

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A,

L = 10 mH, RG = 25 W)

EAS

150

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient – Steady State (Note 1)

RqJA

83.5

°C/W

Junction−to−Ambient – t

v 10 s (Note 1)

RqJA

58

Junction−to−Ambient – Steady State (Note 2)

RqJA

150

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

2. Surfacemounted on FR4 board using the minimum recommended pad size.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

NTMS4706NR2

SO−8

2500/Tape & Reel

V(BR)DSS

RDS(ON) TYP

ID MAX

(Note 1)

30 V

9.0 m

W @ 10 V

10.3 A

N−Channel

D

S

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SO−8

CASE 751

STYLE 12

MARKING DIAGRAM/

PIN ASSIGNMENT

1

11.4 m

W @ 4.5 V

NTMS4706NR2G

SO−8

(Pb−Free)

2500/Tape & Reel

4706N = Device Code

A

= Assembly Location

L

= WaferLot

Y

= Year

WW

= Work Week

G

= Pb−Free Package

18

Drain

Source

Gate

Top View

(Note: Microdot may be in either location)

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