NVD5803NT4G datasheet(3/6 Pages) ONSEMI

Part #	NVD5803NT4G

Description	Power MOSFET 40 V, 85 A, Single N?묬hannel, DPAK

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NVD5803N

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TYPICAL CHARACTERISTICS

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01234

5

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

105

85

65

25

5

−15

−35

−55

0.7

0.8

0.9

1.2

1.3

1.4

1.6

1.8

10 V

4.8 V

VGS = 5 V

4.2 V

4.0 V

3.8 V

3.6 V

TJ = 25°C

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 125°C

ID = 50 A

TJ = 25°C

VGS = 5 V

TJ = 25°C

VGS = 10 V

45

125 145 165

1.0

1.1

1.5

1.7

VGS = 10 V

ID = 50 A

TJ = 125°C

TJ = 150°C

VGS = 0 V

4.4 V

4.6 V

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23

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6

0.004

0.006

0.008

0.010

246

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0.004

0.005

0.006

0.007

0.008

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